Almost all semiconductor technology research institutions in the world are trying to make single-layer graphene and regard it as a new generation of IC materials superior to silicon; but now IBM researchers have discovered another kind of graphene material. The advantages can significantly reduce the cost of blue LEDs made with gallium nitride (GaN). We have grown a single-crystal GaN film on wafer size graphene formed from silicon carbide wafers; JeehwanKim, a member of the IBMT.J. Watson Research Center who claims to be the inventor, said that the entire GaN film is transferred to silicon. On the substrate, graphene is still left on the SiC wafer and reused to continue the process of growing the GaN film and transferring the film. He pointed out that this new method is much more cost-effective than the traditional way of using expensive SiC or sapphire wafers and can only be used to grow GaN films, and they found a new way to use graphite. The quality of the film grown on the ene is higher than that of the film grown on other substrates (lower defect density). It is very challenging to grow a single-layer graphene film of wafer size. In order to manufacture IC semiconductor components using graphene, experts have tried many different methods in the past, but unfortunately only partially succeeded; SiC wafers are currently found. And then vaporizing silicon is one of the most reliable methods. And IBM's Kim confirmed that after vaporizing the silicon of the SiC wafer, the remaining graphene film can be safely transferred to the silicon substrate; in addition, they also confirmed that the quality of graphene produced in this way is better than direct The quality of graphene grown on wafers where graphene is to be used. As for the growth of other films on graphene, a new application path has been opened for this material; Kim developed the technology he developed as a direct van der Waalser for growing high quality single crystal GaN films on epitaxial graphene. Crystal method (directvanderWaalsepitaxy). He claims that GaN films or other films grown in this way can be freely implanted onto any substrate to support the fabrication of components such as. Because of the GaN film produced by Kim's lab in the above-mentioned way, it is a successful reuse of graphene on SiC wafers. They believe that this is a new way to use graphene to significantly reduce the manufacturing cost of semiconductor components: we confirmed for the first time It is possible to grow wafer-sized single crystal thin films on graphene, and graphene can be reused; in addition, our research and development results provide a general guideline for growing high quality single crystal semiconductor devices on graphene. After vaporizing the silicon of the SiC wafer, the single layer of graphene can be stripped off and transferred to any substrate, such as crystalline silicon. Because the intact graphene layer is not destroyed after the film grown on it is peeled off, Kim also tries to grow other kinds of semiconductor components on the perfect crystalline graphene plate and then transfer it to other places, for example. Soft substrates; he said that this technology has the opportunity to generate high-frequency transistors, photodetectors, biosensors and other post-silicon era components, and IBM has invested $3 billion over the next five years.
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